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Japanese scientists have developed a new type of “universal” computing memory that is significantly faster and requires less energy than the modules used in modern laptops and PCs.
Magnetoresistive random access memory (MRAM) is a type of general-purpose memory that can overcome some of the shortcomings of traditional RAM, which can slow down under high demand due to limited capacity. General-purpose memory combines the speed of existing RAM with the ability to store data without a power source.
Memory systems such as MRAM offer superior performance compared to components used in modern computers and smart devices, as they provide higher speed, significantly higher capacity, and improved durability.
This innovative technology operates at higher speeds and in higher capacities than conventional RAM, successfully solving the problem of high power requirements for writing data that had previously hampered MRAM.
MRAM devices consume little power in standby mode, but they require high electrical current to switch the direction of the magnetization vector configurations of the magnetic tunnel junctions, which uses the direction of magnetization to represent binary values in computers. This limits their use in most computing systems, and a more efficient way to switch these vectors was needed to achieve low power consumption when writing data.
In a paper published Dec. 25, 2024, in the journal Advanced Science, the researchers reported creating a new component for controlling the electric field in MRAM devices. Their method requires significantly less energy to change polarity, thereby reducing power requirements and increasing the speed of operations.
Next-generation computing memory
The prototype component they developed is called a “multiferroic heterostructure” — a combination of ferromagnetic and piezoelectric materials with an ultra-thin layer of vanadium between them that can be magnetized by an electric field. This is different from other MRAM devices, which lack the vanadium layer.
Structural changes in the ferromagnetic layer made it difficult to maintain a stable magnetization direction in previous MRAM devices. To address this stability issue, a vanadium interlayer between the ferromagnetic and piezoelectric layers functions as a buffer.
By passing an electric current through the materials, the scientists demonstrated the ability to change the direction of the magnetic state. These materials retained their shape, unlike previous models. Moreover, the magnetic state was maintained even after the electric charge was cut off, which allowed them to maintain a stable binary state without an external power source.
The study did not consider the possible degradation of switching efficiency over time. This is a common problem with many electrical devices. For example, it is often mentioned that rechargeable household batteries can only be used a certain number of times (approximately 500) before their capacity begins to decline.
Ultimately, the new MRAM technology could lead to more powerful commercial computing and offer a longer lifespan, the scientists say. That's because the new switching technology requires far less power than previous solutions, is more reliable than current RAM technologies, and has no moving parts.
Peter Ray EllisonSocial Links Navigation
Peter is a qualified engineer and an experienced freelance journalist specialising in science, technology and culture. He has written for a variety of publications including the BBC, Computer Weekly, IT Pro, The Guardian and The Independent. He works in the field of technology
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